Abstract
Optimization of structure and configuration of GaAs MESFETs for high performance and high reliability was investigated. GaAs MESFETs with the NF/sub min/ of 0.89 dB and the standard deviation of 0.07 dB at 4 GHz, the CW and pulse input power capability more than 0.4 W and 2 W, respectively and the failure rate less than 180 Fit have become practical.
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