Highly reliable cylindrical thin magnetic film memory

Abstract

Cylindrical thin magnetic film elements for memory application have been extensively studied because they are low cost, undisturbed by external magnetic fields, and have relatively large output. However, continuity of magnetic material on the core conductor surface has made memory properties worse, since a memory region received the effect of adjacent regions by domain wall creepings. This paper will introduce a highly reliable cylindrical thin magnetic film memory, remarkably improved by applying a static magnetic field between the memory areas under neighboring word lines in a memory plane. The direction of the static magnetic field is along the hard axis and opposed to the direction of world fields. The application of static magnetic field results in the improvement of write-in characteristics, the rise in readout signal levels, and the increase in disturb threshold current.