Abstract
This paper reports a highly reliable hydrogenated amorphous silicon (a-Si:H) gate driver using center-offset thin-film transistors (TFTs). The a-Si:H TFTs with a center-offset structure are demonstrated to be highly reliable compared to a conventional a-Si:H TFT. The Vth shift of center-offset a-Si:H TFTs was found to be 35% less than that of the conventional a-Si:H TFT. Therefore, the center-offset a-Si:H TFTs are used as pull-down TFTs in the gate driver circuit. When the center-offset pull-down TFTs are used in the a-Si:H gate driver, the output off-state of the gate driver remains stable for periods longer than 3 × 108 s.
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