Abstract
A Ti/TaN multi-layer can achieve a highly reliable Cu interconnect with a porous SiOC (ELK; k < 2.5) structure. Ti shows good wettability with Cu and unique properties with extreme low-k (ELK)-structured interconnects. On the other hand, Ta is known to be an effective barrier to Cu diffusion. We confirmed that the Ti barrier is different from the Ta barrier from the viewpoint of metal-oxide behavior and improved electromigration (EM) and stress migration (SM). In addition, the time-dependent dielectric breakdown (TDDB) characteristic can be improved by using a Ti barrier combined with a TaN barrier.
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