Abstract
AbstractAdvanced control of light focusing, reflection, and transmission is possible with highly refractive transparent materials; however, such materials are difficult to discover because of the negative correlation between the refractive index and the optical band gap. This study elucidates half‐Heuslers as highly refractive transparent materials, considering their densely packed crystal structures comprising both covalent and ionic bonds with d orbitals. Theoretical calculations revealed that 22 ternary half‐Heusler systems (αβγ) exhibited higher refractive indices with wider band gaps than conventional high‐refractive‐index‐transparent materials in the near‐infrared region. The key to achieving a high index and wide gap is aligning α‐d and β‐d levels within a small lattice frame given by small γ elements to the verge of forming Γ‐point conduction band minimum. Experimental examinations revealed that α and γ elements with low and high melting points are preferred for the thin‐film preparation of the well‐ordered half‐Heuslers. Highly refractive transparent half‐Heuslers and their material designs expedite post‐silicon technology for controlling near‐infrared light.
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