Abstract
Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes Woong-Ki Hong,* June-O Song, Hyun-Gi Hong, Keun-Yong Ban, Takhee Lee, J. S. Kwak, Y. Park, and Tae-Yeon Seong Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea School of Electric and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea Samsung Advanced Institute of Technology, Photonics Laboratory, Suwon 440-600, Korea
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