Abstract
Zinc oxide films, with a high degree of c-axis orientation, have been grown on glass substrates by a chemical vapor deposition process involving the oxidation of diethylzinc. Film growth was carried out over the 200–500 °C temperature range; however, the maximum crystal orientation was found to occur with substrate temperatures between 325 and 400 °C. The effect of different substrate materials on crystallographic orientation is also described in this letter.
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