Abstract

Highly oriented VO 2 thin films were grown on sapphire substrates by a sol-gel method which includes a low-pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO 2 phase over a relatively wide range of pressures below 100 mTorr and temperatures above 400°C. X-ray diffraction analysis showed that as-deposited films crystallize directly to the VO 2 phase without passing through intermediate phases. VO 2 films have been found to be with [100]- and [010]-preferred orientations on Al 2 O 3 (1012) and Al 2 O 3 (1010) substrates, respectively. Both films undergo a metal-insulator transition with an abrupt change in resistance, with different transition behaviors observed for the differently oriented films. For the [010]-oriented VO 2 films a larger change in resistance of 1.2 X 10 4 and a lower transition temperature are found compared to the values obtained for the [100]-oriented films.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.