Highly oriented PbZr 0.3Ti 0.7O 3 thin film on LaNiO 3-coated Si substrate derived from a chemical solution technique

Abstract

Highly (100)-oriented LaNiO 3 (LNO) films directly on Si substrates were prepared by a simple chemical solution technique using lanthanum nitrate and nickel acetate as the start material sources. Highly (100)-oriented PbZr 0.30Ti 0.70O 3 (PZT30/70) thin film was fabricated subsequently on the LNO-coated Si substrates using a modified sol-gel method. The orientation of the PZT and LNO thin films was characterized by X-ray diffraction (XRD). The resistivity of the LNO thin film at room temperature (300 K) is 7.6×10 −4 Ωcm. The remmant polarization ( P r ) and coercive field ( E c ) of the Pt/PZT/LNO/Si capacitor were 10.5–16.8 μC/cm 2 and 20.5–31.6 kV/cm with the variation of electric field (100–200 kV/cm). The values of dielectric constant and dissipation factor of 10 kHz were 700 and 0.019, respectively. After 10 8 switching cycles, the net-switched polarization values of the capacitor drop to 95, 62, and 37% of their initial values under different electric fields ranging from 100 to 200 kV/cm, respectively.