Abstract
Some electrical properties of niobium-doped highly (001)-oriented lead titanate thin films epitaxially grown on (100)Pt/(100)MgO substrates by reactive sputtering have been analyzed. The dielectric permittivity, which ranged from 160 to 200, had its minimum value corresponding to a niobium concentration of 1 mol%. Doped samples exhibited outstanding low dielectric losses, lower than 2.5%, compared to undoped ones. Current-voltage (I–V) leakage characteristics of doped samples were considerably better than those of the undoped samples. Such enhancement of resistivity is related to a decrease in the characteristic p-type semiconductive behavior of undoped PbTiO3 due to a reduction in lead vacancies which occurs in the presence of niobium. Doped samples exhibited electric displacement-electric field (D–E) hysteresis curves with high remanent polarization, around 30 µC/cm2, and high coercive field, around 150 kV/cm. In addition, voltage offsets in the hysteresis curves of doped samples could be lowered by applying a DC bias.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
