Abstract
Electrical characteristics and physical analyses of sputter deposited 50-nm-thick ferroelectric AlxSc1-xN films on W bottom electrodes are examined. A highly c-axis oriented growth of the Al0.8Sc0.2N film with ferroelectric capacitance-voltage characteristics is confirmed. The Al0.8Sc0.2N films showed better oriented growth than sputter deposited AlN films or Al0.8Sc0.2N/AlN stacked films. The results indicate that Al0.8Sc0.2N films directly deposited on W electrodes have the advantage to obtain the c-axis oriented Al0.8Sc0.2N films.
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