Abstract
Highly transparent conductive Ga-doped ZnO (GZO) films and GZO films with indium codoping (GZO:In) were deposited on glass substrates at 200 °C by ion plating using direct-current arc discharge. Etching in 0.1 wt % HCl solution made it possible to form a craterlike textured surface with a high haze value. For a textured GZO:In film with a remaining thickness of 388 nm, the sheet resistance was 8.1 Ω/□. Damp-heat test results showed that highly moisture-resistant GZO films with a textured surface could be achieved after indium codoping. For the textured GZO:In film, the relative change in sheet resistance was as low as 5.8% while maintaining a high transparency. The moisture-resistant GZO:In films with a textured surface have great potential for use as window layers in thin-film solar cells.
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