Highly manufacturable ELK integration technology with metal hard mask process for high performance 32nm-node interconnect and beyond

Abstract

High performance 32 nm-node interconnect with ELK (Extremely Low-k, k=3D2.4) has been demonstrated. To suppress process damage and enlarge the via-line space with a wide lithography process margin, robust ELK film with a metal hard mask (MHM) self-aligned via process has been developed. It has accomplished both ultimate low capacitance wirings and high TDDB reliability between Cu lines with vias. In addition, a novel technique of interface engineering between ELK and a liner layer has been developed to strengthen the tolerance against chip packaging. This has achieved highly reliable chip packaging. This complete process has a high manufacturability and it therefore offers a promising technology for the 32-nm node and beyond.