Abstract
A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.
Highlights
Aspect Ratio Complex Geometry Lego-Like Silicon Electronics, which has been published in final form at http://doi.org/10.1002/
The major advances reported in this manuscripts are: 1.A highly manufacturable complementary metal oxide semiconductor (CMOS) compatible process for achieving high-aspect ratio
We demonstrate a novel hybrid soft/hard mask layer for deep reactive ion etching (DRIE)
Summary
Aspect Ratio Complex Geometry Lego-Like Silicon Electronics, which has been published in final form at http://doi.org/10.1002/ smll.201601801. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for selfarchiving.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
