Abstract
A highly linear operational trans-conductance amplifier (OTA) with 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> -order nonlinearity superposition technique is proposed. For achieving high linearity, a native threshold voltage NMOS working in linear region is utilized to obtain the positive 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> -order nonlinear form to compensate the negative 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> -order nonlinear form generated by a normal threshold voltage NMOS which is also working in linear region. Based on the proposed highly linear OTA with 42dBm OIP3, a 4 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> -order butterworth G <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> -C low-pass filter with a tunable cut-off frequency from 1MHz to 10MHz is demonstrated in a standard 0.13μm CMOS technology. The filter achieves 34dBm in-band IIP3, consumes 9.9mW from 1.2V supply voltage, and occupies 0.62mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> silicon area.
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