Highly Improved PID Stability for Cu(In,Ga)Se2 Solar Modules Due to a Filled P1 Groove

Abstract

Two types of Cu(In,Ga)Se2 (CIGS) thin-film solar modules, differing only in the patterning procedures, were exposed to a high voltage (1 kV) across the thickness of the soda-lime glass substrate. Both module types utilized a cell stack, and in particular, a molybdenum back contact, which was optimized for CIGS solar cells with enhanced stability against potential-induced degradation (PID). A standard module with regular patterning lines for monolithic interconnection consists of P1, P2, and P3 lines, with P1 separating the back contact, P2 establishing the contact between the front contact TCO of one cell to the Mo back contact of the next cell, and P3 isolating the front contact from one cell to the next cell. However, modules employing this cell stack with regular patterning lines P1, P2, and P3 suffered considerably from PID while modules with a P1 groove filled with an insulator showed greatly enhanced stability similar to the pure single cell without P1 patterning. PID manifests once a specific quantity of charge has been transmitted through the soda-lime glass substrate, while the molybdenum back contact of the cell functions as the cathode, maintaining a negative bias relative to the substrate’s backside. As a consequence of PID, sodium is increased in the adsorber for susceptible cells. Therefore, inhibiting sodium transport through the P1 groove by filling it with an insulating material enhances the PID stability of the modules considerably. As a result, the modules with a filled P1 groove showed similar stability to the single solar cells with an improved PID stable cell stack, while modules without a filled P1 patterning were much more susceptible to PID, although a cell stack with greatly enhanced PID stability was used. In summary, the presented strategy to fill the P1 groove offers a viable and novel path to improved PID stability of CIGS modules.