Abstract
We have fabricated quantum dot based light emitting diodes (QLEDs) with 3 nm-titanium oxide (TiO2) nanocrystals used as the electron transport layer (ETL). Different thicknesses of TiO2 films were fabricated under the post-annealing conditions (at 100 °C) from 30 min to 120 min, leading to significantly enhanced electrical characteristics and increased luminance intensity of the QLED device due to better crystallization of TiO2 films. The blue shift of the electroluminescence (EL) peak was observed as evidence of the enhanced electron injection from the TiO2 film to the quantum dot emission layer. As a result, the highly stable QLED device was fabricated and the EL intensity was improved from 25 cd m−2 to 390 cd m−2 with a 49% decrease in the turn-on voltage.
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