Highly (h00)-oriented KNN homo-multilayer films grown on Si by sol-gel process via an alternating non-alkoxide and alkoxide route

Abstract

Traditional Sol-Gel KNN film prepared either with niobium ethoxide C10H25NbO5 (metal alkoxide route) or niobium oxide Nb2O5 (non-alkoxide route) as niobium source. However, they are either extremely expensive or of poor quality for films. Hence, a novel and manageable Sol-Gel process based on the combination of the above two routes was developed to achieve high-quality KNN films. Here, highly (h00)-oriented KNN homo-multilayer films were fabricated on traditional Si by an alternating non-alkoxide and metal alkoxide route. As expected, these KNN films have much higher oriented degree than that prepared by any single route. Benefited from the flexibility of alternating sol-gel synthesis routes and homo-multilayered film design, the crystal structures and electrical properties of KNN films can be tailored effectively by the period number N and annealing temperature. The results suggest that the employing of homo-interfaces may be an effective method to improve the crystallinity and performances of sol-gel films.