Abstract
III-V semiconductors have been intensively studied with the goal of realizing metal-oxide-semiconductor field-effect transistors (MOSFETs) with high mobility, a high on-off ratio, and low power consumption as next-generation transistors designed to replace current Si technology. Of these semiconductors, a narrow band-gap semiconductor InAs has strong Rashba spin-orbit interaction, thus making it advantageous in terms of both high field-effect transistor (FET) performance and efficient spin control. Here we report a high-performance InAs nanowire MOSFET with a gate-all-around (GAA) structure, where we simultaneously control the spin precession using the Rashba interaction. Our FET has a high on-off ratio (104~106) and a high field-effect mobility (1200 cm2/Vs) and both values are comparable to those of previously reported nanowire FETs. Simultaneously, GAA geometry combined with high- κ dielectric enables the creation of a large and uniform coaxial electric field (>107 V/m), thereby achieving highly controllable Rashba coupling (1 × 10−11 eVm within a gate-voltage swing of 1 V), i.e. an operation voltage one order of magnitude smaller than those of back-gated nanowire MOSFETs. Our demonstration of high FET performance and spin controllability offers a new way of realizing low-power consumption nanoscale spin MOSFETs.
Highlights
The high electron mobility of III-V semiconductors makes them good candidates for the development of field-effect transistors that can be operated with high speed, a high on-off ratio, and a low power consumption
The Rashba parameter that we obtained by weak antilocalization measurements is 0.6 × 10−11–2 × 10−11 eVm, and the gate voltage tunability is 1.2 × 10−11–2.4 × 10−11 eVm/V, the latter being ten times larger than that obtained for various types of III-V semiconductors including InAs nanowire MOSFETs6–16
While the subthreshold slope (SS) values for our typical devices fabricated in the same manner usually exceed 200 mV/dec at room temperature (RT), which is larger than the ideal RT limit of 60 mV/dec, the on-off ratio exhibits good performance and is generally higher than ~104
Summary
The high electron mobility of III-V semiconductors makes them good candidates for the development of field-effect transistors that can be operated with high speed, a high on-off ratio, and a low power consumption. To obtain better electric-field control of the Rashba SOI, III-V semiconductors such as GaAs/AlGaAs, GaInAs/ InP, InAs, InSb and InGaAs have been investigated for various structures including two-dimensional electron gas (2DEG) in heterostructures[5,6,7], quantum wells (QW)[8,9,10] and quantum wires[11] using a top-down microfabrication process These studies reported that Rashba parameters range from α = 0.3 × 10−11 to 1 × 10−11 eVm (refs 6–11) and have a gate voltage Vg tunability of ~1.4 × 10−12 eVm/V (refs 5–9). As MOSFETs have faster responses than ion-gated devices, which normally require considerable time for electric double layer stabilization[23], our demonstration of both the excellent FET performance and high tunability of the Rashba SOI in a small Vg range could lead to the development of a practical spin nanowire MOSFET with low power consumption that is compatible with the currently used Si transistor platform
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