Abstract
Cu(In, Ga)Se 2 (CIGS) is a chalcopyrite based semiconductor used as a very promising material for high performance thin film solar cell applications. In this research work, numerical analysis of ultra thin CIGS solar cell towards the possibility of ultra thin layer of CIGS absorber has been performed by using wxAMPS simulator to examine the performance of the proposed cell. The main focus of this work is to explore the performance of ultra thin CIGS solar cell. A conversion efficiency of 19.48% (FF=0.77, Voc=0.86V and Jsc=29.45mA/cm2) has been found for 700 nm CIGS absorber layer without any BSF. It has been found that increased back surface recombination with ultra thin absorber layer deteriorates the cell efficiency. This problem has been solved by inserting a thin layer of Tin Selenide (SnSe) as Back Surface Field (BSF). A better conversion efficiency of 24% (FF=0.80, V oc =0.89V and J sc =33.47mA/cm2) has been achieved for the proposed cell with 700 nm CIGS absorber and 100 nm SnSe layer as BSF. Higher thermal stability has been achieved for the proposed cell with SnSe BSF than without BSF.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
