Abstract
The optimization of AlGaInP/GaInPAs MQW heterostructure MOCVD growth as well as the improvements of active channel formation and P-contact deposition technologies made it possible to increase significantly external differential efficiency (up to 0.5 mW/mA) and CW catastrophic optical damage threshold (up to 40 mW) of spatially single-mode superluminescent diodes (SLDs) with central wavelength of 675 nm. Preliminary life time tests demonstrated high reliability of the devices at output power 30 mW. The relations of spectral and power characteristics of the SLDs as well as SLDs with central wavelengths of about 660 nm and 690 nm on active channel length, pumping level and temperature were studied. The results of mathematical modeling of combined light sources output parameters that could be made with SLDs and a broadband SM fiber coupler, are presented.
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