Abstract
Double disposable sidewall spacers (DDSW) process and adhesion reinforcement technique (ART) are proposed, for the first time, demonstrating efficient stress-transfer from the dual stress liner (DSL) to the FET channel region. A thin L-shape sidewall formed by the DDSW process was designed to compensate decreased channel stress resulted from the aggressive pitch scaling. A +10% enhancement of channel conductance has been achieved for NTETs by the DDSW process compared with a conventional DSL one. For PFETs, achieved +23% I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> enhancement by using the ART, was resulted from avoiding stress degradation in the DSL process and optimizing the DSL layout.
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