Abstract
AbstractHigh‐speed electro‐optic modulators are key components in modern communication networks and various applications that require chip‐scale modulation with large bandwidth, high modulation efficiency, and compact footprint. However, fundamental trade‐offs make it challenging to achieve these metrics simultaneously, and thus new methodologies must be explored. To this end, a Mach–Zehnder modulator harnessing slow‐light waveguides and capacitively loaded slow‐wave electrodes are presented on silicon‐nitride‐loaded lithium niobate on an insulator platform. The increased group index and reduced microwave loss significantly improve the modulation efficiency. With the 1‐mm‐length modulation section, a low half‐wave voltage length product Vπ·L of 0.21 V cm is obtained, which is one order of magnitude smaller than that of conventional thin film lithium niobate Mach–Zehnder modulators, and a modulation bandwidth of surpassing 110 GHz is achieved. The digital signal processor‐free non‐return‐to‐zero signal and eight‐level pulse amplitude modulation signal of up to 180 and 300 Gbps, respectively, are generated by the modulator, which provides ultra‐large bandwidth, ultra‐high efficiency, and a compact solution for next‐generation electro‐optic systems.
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