Abstract
Optimisation of the epitaxial growth of AlGaInP/GaInPAs nanoheterostructures and improvement of the technologies of active channel formation and p-contact deposition made it possible to considerably increase the external differential quantum efficiency (up to 0.5 mW mA−1), the catastrophic optical degradation threshold (up to 40 mW), and the spectral width (to FWHM exceeding 15 nm) of single transverse mode superluminescent diodes with the centre wavelength of about 675 nm. Lifetime tests demonstrated high reliability of these diodes at a cw output optical power up to 30 mW.
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