Highly Efficient Red Phosphorescent OLEDs Fabricated Using Extremely Low Doping Technology

Abstract

Highly efficient red phosphorescent organic light-emitting devices (PHOLEDs) were fabricated using extremely low doping technology in a simple device configuration. They were developed by making use of the narrow-bandgap fluorescent host material bis(10-hydroxybenzo[h] quinolinato)beryllium complex (Bebq2) and red dopant tris(1-phenylisoquinoline)iridium (Ir(piq)3). Maximum current and power efficiencies of 11.60 cd/A and 13.02 lm/W, respectively, are demonstrated with an extremely low doping level of 1 wt%. These results reveal a practical way to make highly efficient PHOLEDs by reducing dopant self quenching.