Abstract
Nanocrystalline graphene-MoS2 lateral interfaces reveal distinct current-rectified characteristics, similar to a p-n diode, that are seldom observed for the monolayer graphene-MoS2 vertical interface. It is found that the lateral interfaces can increase the Schottky barrier between the graphene and the MoS2 because the metallic MoS2 edges cause charge reordering and a potential shift in the graphene.
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