Abstract
Abstract Inorganic charge transporting materials offer numerous advantages over their organic counterparts, including high charge carrier mobility, stability, simple preparation, and low cost, and have been studied for perovskite optoelectronic devices. However, the majority of these materials strongly quench perovskite luminescence, which is detrimental to the performance of perovskite light-emitting devices. To overcome this and obtain good quality perovskite films, an organic interlayer modified with UV ozone is used. The effects of the UV ozone treatment on the energetics and chemical structures of the organic interlayer are examined. On the basis of this strategy, we fabricate perovskite light-emitting devices that contain a cuprous thiocyanate hole injection layer, which exhibit an improved external quantum efficiency of 10.2% and greater operational stability when compared with the devices that contain a conducting-polymer hole injection layer.
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