Abstract
This study obtained highly uniform and efficient GaN-based vertical-cavity surface-emitting lasers with curved mirrors from a single wafer. The average threshold current (I th) and the optical output power (P max) of 14 chips measured up to 7.0 mA were 0.64 mA and 4.5 mW, respectively. The standard deviations of I th and P max were 6.7% and 5.1%, respectively. Additionally, the best chip showed maximum values of wall plug efficiency and output power of 13.4% and 7.6 mW, respectively, at 5.2 mA and 12.8 mA operating currents.
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