Abstract
AbstractA compact and highly efficient technique to excite SPP mode at an Au/SiO2 interface by using an engineered high index (silicon) gabled tip at the 1550 nm wavelength has been proposed. The optimized geometry of the Si tip enables a highly efficient excitation of the single interface SPP mode through near field interaction in an ultra‐compact setup. An experimental demonstration of the proposed scheme is also presented in the paper which converts 25.5% of the total input power to an SPP mode. With an improved fabrication, this efficiency can reach as high as 52%. The device is compact, facilitates on‐chip excitation of the SPP, its fabrication is compatible with the standard Si fabrication processes, and, as such it is expected to be very useful in the design of future integrated photonic circuits as well as integrated sensors. Also, this scheme can find applications in studying nonlinear characteristics of materials.
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