Abstract
Abstract Highly efficient electron emitting diodes have successfully been fabricated using single-crystalline diamond films epitaxially grown on high-pressure synthesized (100) diamond. It turns out that the crystalline quality of the diamond used is essential to the present-type electron emitter operated under extremely high electric fields of ∼107 V/cm. For the electron emitting diode, the current efficiency defined as the ratio of the emission current to the driving current can reach unity in the best case. The mechanism of the highly efficient electron emission observed is discussed in relation to possible carrier excitations in the undoped diamond layer under the high fields. Using a high-power microwave-plasma chemical vapor deposition apparatus, high-quality diamond thin films were homoepitaxially grown. It is found from measuring the threshold energy of total photoelectron yields that a moderate surface oxidation process can change the surface electric dipole layer and, therefore, the electron affinity for hydrogen-terminated diamond surfaces as the Topping model shows.
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