Abstract
Single-walled carbon nanotube (SWCNT) based transparent and conductive films (TCFs) are one of the most prospective materials for novel flexible and stretchable electronic devices. Development of reproducible and scalable doping procedure is the key step towards the widespread implementation of SWCNT TCFs. Here, we thoroughly investigate a dip-coating technique for SWCNT doping as a promising approach for the practical manufacturing of SWCNT films with high performance. We examine the effect of dip-coating parameters on optical and electrical properties of the films using HAuCl4 solution in isopropyl alcohol (IPA) and in situ investigate doping effects. This method appeared to easily fine-tune the optoelectronic parameters of SWCNT films and achieve a record sheet resistance value of 36 Ohm/sq. at the 90% transmittance in the middle of visible spectral range by increasing a work function value from 4.8 (for pristine SWCNTs) to 6.0 eV. The proposed approach allows efficient, uniform, and reproducible fabrication of highly conductive and transparent SWCNT films and opens an avenue for precise tailoring of SWCNT Fermi level for optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
