Abstract
Highly efficient blue electrophosphorscent light emitting diodes with a new host material N, N′-dicarbazolyl-1,4-dimethene-benzene (DCB) were demonstrated. The energy transfer mechanism of the host–guest material system consisting of DCB and bis[(4,6-difluorophenyl)-pyridinato-N,C 2′] (picolinato) Ir(III) (FIrpic) is an exothermic process. The device with a configuration of indium tin oxide/ N, N′-diphenyl- N, N′-bis(1,1′-biphenyl)-4,4′-diamine (NPB)/DCB:FIrpic/4,7-diphenyl-1,10-phenanthroline(BPhen)/Mg:Ag was optimized by adjusting the thickness of emitting layer and the dopant concentration. The device with the 8% (weight ratio) FIrpic and 30 nm emitting layer exhibits the maximum external quantum efficiency and current efficiency of 5.8% and 9.8 cd/A, respectively, at the luminance of 22 cd/m 2 driven at the voltage of 6.0 V.
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