Abstract
2-TA and 3-TA were introduced for the first time on the surface of ZnO, and used as SAMs for interfacial modification. A highest PCE of 20.6% was achieved for 2-TA PSCs with improved energy alignment and perovskite film quality, and reduced defect density. The modified ZnO exhibited better thermostability of the perovskite and resultant device stability.
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