Abstract
Tin–lead perovskite-based photodetectors have a wide light-absorption wavelength range, which spans 1000 nm. However, the preparation of the mixed tin–lead perovskite films faces two great obstacles, namely easy oxidation of Sn2+ to Sn4+ and fast crystallization from tin–lead perovskite precursor solutions, thus further resulting in poor morphology and high density of defects in tin–lead perovskite films. In this study, we demonstrated a high-performance of near-infrared photodetectors prepared from a stable low-bandgap (MAPbI3)0.5(FASnI3)0.5 film modified with 2-fluorophenethylammonium iodide (2-F-PEAI). The addition engineering can efficiently improve the crystallization of (MAPbI3)0.5(FASnI3)0.5 films through the coordination binding between Pb2+ and N atom in 2-F-PEAI, and resulting in a uniform and dense (MAPbI3)0.5(FASnI3)0.5 film. Moreover, 2-F-PEAI suppressed Sn2+ oxidation and effectively passivated defects in the (MAPbI3)0.5(FASnI3)0.5 film, thereby significantly reducing the dark current in the PDs. Consequently, the near-infrared photodetectors showed a high responsivity with a specific detectivity of over 1012 Jones at 800 to near-1000 nm. Additionally, the stability of PDs incorporated with 2-F-PEAI has been significantly improved under air conditions, and the device with the 2-F-PEAI ratio of 400:1 retained 80% of its initial efficiency after 450 h storage in air without encapsulation. Finally, 5 × 5 cm2 photodetector arrays were fabricated to demonstrate the potential utility of the Sn–Pb perovskite photodetector in optical imaging and optoelectronic applications.
Published Version
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