Abstract
Orange–red phosphorescent organic light-emitting devices (PHOLEDs) with high efficiency and concentration insensitivity based on a novel iridium complex, bis[2-(biphenyl-4-yl)benzothiazole-N,C2′]iridium(III) (acetylacetonate) [(4Phbt)2Ir(acac)], were fabricated. With the heavily doped emissive layer (EML) of 4,4′-N,N′-dicarbazolylbiphenyl (CBP): (4Phbt)2Ir(acac) in a wide and easily controlled dopant concentration range from 12wt% to 24wt%, a maximum power efficiency of 29lm/W and an external quantum efficiency of >16% of the PHOLEDs were obtained, implying the insensitivity of electroluminescence (EL) properties to doping concentration. Meanwhile, a maximum power efficiency of 5.0lm/W was achieved from a non-doped device with neat (4Phbt)2Ir(acac) as the EML, indicating a superior property of self-quenching resistance. The mechanism of direct exciton formation, in which exciton-formation regions are distributed throughout the EML, is responsible for the significant alleviation of triplet–triplet annihilation and superior EL performance.
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