Abstract
Efficient doping of semiconductor nanowires remains a major challenge towards the commercialization of nanowire-based devices. In this work we investigate the growth regimes and electrical properties of MBE-grown p- and n-type gallium phosphide nanowires doped with Be and Si, respectively. Electrical conductivity of individual nanowires is quantitatively studied via atomic force microscopy supported with numerical analysis. Based on conductivity measurements, we provide growth strategies for achieving the doping level up to ND=5⋅1018 cm-3 and NA=2⋅1019 cm-3 for GaP:Si and GaP:Be nanowires respectively, which is high enough for technological applications.
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