Abstract
Efficient doping of semiconductor nanowires remains a major challenge towards the commercialization of nanowire-based devices. In this work we investigate the growth regimes and electrical properties of MBE-grown p- and n-type gallium phosphide nanowires doped with Be and Si, respectively. Electrical conductivity of individual nanowires is quantitatively studied via atomic force microscopy supported with numerical analysis. Based on conductivity measurements, we provide growth strategies for achieving the doping level up to ND=5⋅1018 cm-3 and NA=2⋅1019 cm-3 for GaP:Si and GaP:Be nanowires respectively, which is high enough for technological applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
