Abstract

AbstractWe prepared yttria‐stabilized zirconia (YSZ) and titania crystalline thin films on polycarbonate (PC) substrates by the sol‐gel transfer technique that we have developed recently. Precursor gel films were deposited by spin‐coating on a polyimide/polyvinylpyrrolidone mixture layer on Si(100) substrates, and then were calcined at 600°C. The spin‐coating and the calcination were cycled, followed by final firing at 600–1000°C, to obtain 140–190 nm thick, YSZ and titania crystalline thin films. The film densification progressed as the final firing temperature increased, where the porosity calculated from the refractive index decreased down to a few percent. The film thus obtained was heated at 190°C on a hot plate, and a PC substrate was pressed on the film to transfer it to the PC substrate. The transferability quantified by image analysis of the film area was found to be significantly different between the YSZ and titania films. In the case of YSZ films, the area of silicon that was fractured and adhered to the transferred film increased significantly with increasing firing temperature, leading to a decrease down to 0% in the fraction of the successful transfer area without such a damage. On the other hand, the fraction of the successful transfer area remained around 90% irrespective of the firing temperature for the titania films. The surface of the titania films that were fired at 800–1000°C and transferred to PC substrates had voids of several tens nm scale, which may have been formed during anatase‐to‐rutile phase transformation. We thought that the reduced titania/Si(100) contact area due to such void formation facilitated the delamination of the titania films from Si(100) substrates. High temperature firing, which promotes crystallization and densification of films, thus affects differently the film transferability to plastic substrates, depending on the type of films. The work also suggested possible use of titania films as release‐assisting layers.

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