Abstract
Abstract Infrared detectors are utilized across a diverse range of applications, yet they currently face challenges such as high power consumption and sensitivity to environmental. Vanadium dioxide, a popular material for infrared detectors, boasts a superior temperature coefficient of resistance and rapid response speed. However, it suffers from a substantial thermal hysteresis width. To overcome this limitation, the film structure is meticulously designed to exhibit a uniform, dense texture with a high degree of orientation and crystallinity on a sapphire substrate. This enhancement significantly boosts the infrared responsiveness of the detector. Under optimal conditions, specifically a bias voltage of 50 mV and infrared irradiation of 150 mW, the photocurrent can achieve a remarkable value of 5.55 μA, while the response speed reaches an impressive 0.23 μA/s. These improvements hold promising implications for infrared detection technology, particularly in areas such as night vision and electrical maintenance.
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