Highly crystalline, highly stable n-type ultrathin crystalline films enabled by solution blending strategy toward organic single-crystal electronics

Abstract

The development of n-type semiconductor is still far behind that of p-type semiconductor on account of the challenges in enhancing carrier mobility and environmental stability. Herein, by blending with the polymers, n-type ultrathin crystalline thin film was successfully prepared by the method of meniscus-guided coating. Remarkably, the n-type crystalline films exhibit ultrathin thickness as low as 5 nm and excellent mobility of 1.58 cm2 V−1 s−1, which is outstanding in currently reported organic n-type transistors. Moreover, the PS layer provides a high-quality interface with ultralow defect which has strong resistance to external interference with excellent long-term stability, paving the way for the application of n-type transistors in logic circuits.