Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

Abstract

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first part of my talk I will show some of our resent results that we demonstrated the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles at high temperature, usually unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our recent results of high mobile samples realized by, interface confined redox reactions [2] , strain induced polarization [3] and modulation doping at complex oxide interfaces. This collection of samples offers unique opportunities for a wide range of rich world of mesoscopic physics. [1] S. Sanne et al. “Enhancement of the chemical stability in confined δ-Bi2O3”. Nature Materials (2015) doi:10.1038/nmat4266 [2] Y. Z. Chen et al. “A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3”. Nature Commun. 4, 1371 (2013) [3] Y. Z. Chen et al. “Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface” Nano Letters. 3774-3778 (2015) 10.1021/nl504622w