Abstract
Highly conductive and conformal hafnium nitride (HfN x ) thin films were prepared by plasma-assisted atomic layer deposition using tetrakis(dimethylamido)hafnium and hydrogen plasma. The effects of deposition temperature, plasma pulse time, radio frequency power, and the N 2 /H 2 ratio on the electrical characteristics of the films were investigated. The growth rate (thickness/ cycle) was in the range of 0.85- 1.45 nm/cycle, and the resistivity of the films varied from 4.0 to 1500 X 10 3 μΩ cm, depending on the deposition conditions. Higher deposition temperature combined with higher power and longer exposure time of the hydrogen plasma was effective in decreasing the film resistivity.
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