Abstract

Thermal atomic layer deposition (ALD) of metal has generally been achieved at high temperatures of around 300 °C or at relatively low temperatures with highly reactive counter reactants, including plasma radicals and O3, which can induce severe damage to substrates. Here, the growth of metallic Pt layers by ALD at a low temperature of 80 °C is achieved by using [(1,2,5,6-η)-1,5-hexadiene]-dimethyl-platinum(II) (HDMP) and O2 as the Pt precursor and counter reactant, respectively. ALD results in the successful growth of continuous Pt layers at the low temperature without any reactive reactants owing to the low activation energy of the HDMP precursor for surface reactions. Because of the high reactivity of the precursor, the growth of a pure Pt layer is achieved on various thermally weak substrates, leading to the fabrication of high-performance conductive cotton fibers by ALD. A capacitive-type textile pressure sensor is successfully demonstrated by stacking elastomeric rubber-coated conductive cotton fibers perpendicularly and integrating them onto a fabric with a 7 × 8 array configuration to identify the features of the applied pressure, which can be effectively utilized as a new platform for future wearable and textile electronics. Normally fragile cotton fibres can be transformed into conductive fabric sensors using a low-temperature platinum deposition technology. The complex shapes and thermal instability of textiles make them hard to use as substrates for electronic devices. Now, Han-Bo-Ram Lee from Incheon National University in South Korea and co-workers have overcome this issue by developing an approach based on atomic-layer deposition. They exposed surfaces such as strands of hair and cotton threads sequentially to a precursor gas made from organoplatinum molecules, and to oxygen. The parachute-like structure of the precursor's molecules aided the continuous growth of nanometre-thin platinum films at temperatures as low as 80 degrees Celsius. By covering two platinum-coated fibres with an insulating polymer and then crossing them perpendicularly, the researchers produced a capacitive sensor capable of detecting small pressure variations for over 10,000 cycles. A highly conductive fibers and sensitive textile pressure sensors are developed by extremely low-temperature atomic layer deposition (ALD) of Pt. The low-temperature Pt ALD is achieved under 100 °C without any reactive reactant, enabling cotton fibers to have excellent electrical properties. The pressure sensors fabricated using the conductive fibers exhibit high performances, and can be applied to smart fabrics which can distinguish features of occupants.

Highlights

  • IntroductionAtomic layer deposition (ALD) has widely attracted considerable interest for various high technologies, such as semiconductor devices and display devices,[1,2,3] because of its superb ability to deposit ultrathin films with excellent controllability and conformality even on complex three-dimensional (3D) structures.[1,2,3,4,5,6,7,8] Based on these superior properties, ALD has been intensively studied for several applications.In particular, textile electronics using the ALD is one of the promising fields since several materials can be readily deposited at temperatures lower than 150 °C by ALD, leading to the effective functionalization of thermally fragile substrates such as plastics, cellulose papers and polymeric textiles.[9,10,11,12] Chen et al.[13] demonstrated hydrophobic silk fabrics with a high laundering durability and robustness due to a TiO2 coating deposited by ALD

  • The growth per cycles (GPCs) of the deposited Pt were saturated at a precursor exposure time of 2 s and reactant exposure time of 4 s, indicating that the deposition of Pt was achieved in a self-limiting surface reaction mode of Atomic layer deposition (ALD)

  • In summary, we developed a powerful ALD process for Pt that can be successfully achieved at temperatures as low as 80 °C and fabricated a highly conductive cotton fiber and textile pressure sensor using this Pt ALD process

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Summary

Introduction

Atomic layer deposition (ALD) has widely attracted considerable interest for various high technologies, such as semiconductor devices and display devices,[1,2,3] because of its superb ability to deposit ultrathin films with excellent controllability and conformality even on complex three-dimensional (3D) structures.[1,2,3,4,5,6,7,8] Based on these superior properties, ALD has been intensively studied for several applications.In particular, textile electronics using the ALD is one of the promising fields since several materials can be readily deposited at temperatures lower than 150 °C by ALD, leading to the effective functionalization of thermally fragile substrates such as plastics, cellulose papers and polymeric textiles.[9,10,11,12] Chen et al.[13] demonstrated hydrophobic silk fabrics with a high laundering durability and robustness due to a TiO2 coating deposited by ALD. A significant reduction of the growth temperatures in the ALD can be achieved by using O3 as a counter reactant; the use of O3, which has a high reactivity, leads to several drawbacks, such as severe damage that can fully etch stable substrates—including graphite—and limitations in conformal deposition on complex 3D structures with high aspect ratios.[21,22,23,24] These negative effects of the previously reported metal ALD severely limit the application of metal ALD that require thermally fragile substrates, despite the low deposition temperatures, as such substrates, which are generally composed of polymeric materials, have poor durability against mechanical damage and highly complex 3D structures. We describe an effective ALD process for Pt achieved at temperatures as low as 80 °C using [(1,2,5,6-η)-1,5-hexadiene]

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