Abstract
Al doped ZnO (AZO) thin films were deposited at room temperature by continuous composition spread method. Various compositions of AZO thin films deposited at room temperature were explored to find excellent electrical and optical properties. The explored composition, 3.13wt.% Al doped ZnO, was obtained with the lowest resistivity and the highest transmittance. We deposited the optimized AZO composition by on-axis RF sputtering to deposit uniform large area thin film and got a thin film with superior electrical, optical, and damp heat properties although it deposited at room temperature (resistivity: 6.5×10−4Ωcm, average transmittance in visible region: 92%).
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