Abstract
We obtained preferentially (220)-oriented yttria-stabilized zirconia (YSZ) buffer layers on glass substrates by pulsed laser deposition. These preferentially (220)-oriented YSZ buffer layers enabled us to grow preferentially (100)-oriented bottom electrodes. On the preferentially (100)-oriented bottom electrodes, we obtained preferentially -oriented (PZT) thin films, which were confirmed by an X-ray diffraction experiment. The highly -oriented PZT thin films exhibited a high ferroelectric polarization of about . We also checked a high storage density of about with a minimum bit size below with the highly -oriented PZT thin films by electric force microscope.
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