Abstract
The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we demonstrate the possibility of doping Cu with up to 10% of Bi atoms without evidence of Bi surface segregation or cluster formation. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures, reflecting the potentiality of these new materials.
Highlights
Spintronics studies and exploits the intrinsic spin of the electron and its associated magnetic moment jointly with its fundamental charge for the generation, manipulation, and detection of spin currents that can be implemented in solid state devices.[1]
The possibility of harvesting pure spin currents, i.e., without charge current, and using them in memory-logic devices plays a key role in the generation of electronics due to the expected low power consumption.[2,3]
101107-4 Ruiz-Gomez et al FIG. 2. (a) Atomic ratios obtained from the evaluation of the X-ray Photoelectron Spectroscopy (XPS) data for a Cu85Bi15 film. (b) (1) Z-contrast and (3) HR-TEM image of Cu75Bi25, (2) Z-contrast, and (4) HR-TEM image of Cu96Bi4. (c) X-ray diffraction (XRD) patterns for the Bi-doped samples under study
Summary
Spintronics studies and exploits the intrinsic spin of the electron and its associated magnetic moment jointly with its fundamental charge for the generation, manipulation, and detection of spin currents that can be implemented in solid state devices.[1]. 2. (a) Atomic ratios obtained from the evaluation of the XPS data for a Cu85Bi15 film.
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