Abstract
Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.
Highlights
To achieve the flexibility, transistors have to sustain harsh bending strain
There were attempts at creating thin film transistor (TFT) based on inorganic semiconductor/organic dielectric layers, including poly (PMMA), poly (PVA), and polyimide (PI), to buffer the non-elastic nature[17,18]
The TFT performances subjected to a certain bending strain were not stable, resulting from the damage to the flexible substrate and/or the organic dielectric layer during the bending cycles
Summary
The devices fabricated at OPP1, OPP2 and OPP3 showed reasonably good transistor performances with an Ion/off of >105 and a mobility of >2.5 cm2/Vs. In addition, the SA7 organic dielectric layer exhibited a reasonable gate leakage current of less than 10−8 A over the given bias range from −15 V to 45 V. As the PBS time increased, more free electrons were trapped to the deep energy level at the interface, and those charges were not released to the channel immediately in the following bias sweeping. High-K dielectric materials (high capacitance) are required to achieve the low SS values
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