Highly and heavily boron doped diamond films

Abstract

From the high ionization energy E i = 0.368 eV and high solid solubility ≥ 1.4 × 10 22 cm − 3 of boron in diamond, metallic conductivity is expected on the boron impurity band within the band gap (Mott model). On the contrary, the numerical models used to describe the superconductivity of metallic diamond mainly use the Bardeen model with a Fermi level within the valence band. Taking into account the decrease to zero of E i through the high [B] range and the band gap narrowing through the high and heavy [B] ranges, both specific of the Bardeen model, we discuss the validity of the Mott and Bardeen models from the literature and cathodoluminescence and Raman experiments. They agree with the Mott rather than the Bardeen model. Several experiments independently show the coupling of boron related levels with the zone centre optical phonons which soften for heavy [B]. The Mott model might explain the similar range of the superconductivity temperature of homoepitaxial and polycrystalline films from the similarity of their boron impurity band.