Highly aligned organic semiconductor thin films grown by hot wall epitaxy

Abstract

In this work we use atomic force microscopy to study the early growth stages of para-sexiphenyl (PSP) films grown on mica by Hot Wall Epitaxy. It is shown that self-organization of PSP molecules occurs during the growth controlled mainly by the substrate temperature and deposition time. In addition X-ray diffraction measurements were performed using synchrotron radiation. These measurements confirmed very high crystalline quality of the grown films.