Abstract

In order to calibrate electron-beam (EB) metrology systems, a fine 240-nm pitch reference grating” fabricated by laser-interferometer lithography and anisotropic chemical wet etching is widely used. However, a pitch grating finer than 200 nm is required for sub-100 nm device manufacture, In this paper, we report highly accurate grating reference having 100-nm pitch size fabricated by EB cell projection lithography,

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