Abstract
A novel doublet generator circuit for memristor-based analog memories or artificial synapses is presented. In memristor-based analog memories or artificial synapses, the read-out pulses cause a drifting problem in the programmed resistance of the memristor. Use of doublet pulse is known to be an efficient solution for preventing resistance variation in memristors. Switching speed and area similarity between the positive and the negative cycles of doublet are two extremely important factors in designing a doublet generator. In this paper, a fast and highly accurate doublet generator where the difference between the positive and negative cycles of pulses is less than 0.012% is proposed.
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